Triode/MOS tube/transistor/module

Diode Configuration: Independent Power: 500mW DC Reverse Withstand Voltage (Vr): 250V Average Rectified Current (Io): 250mA Forward Voltage Drop (Vf): 1.25V@200mA Reverse Recovery Time (trr): 50ns

NPN

This N-Channel MV MOSFET is produced using ON Semiconductor's advanced PowerTrench process which incorporates Shielded Gate technology. This process has been optimized to minimize on-resistance while maintaining excellent switching performance with the industry's best soft body diode.

Dual PNP bipolar digital transistors consist of a transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. Dual PNP bipolar digital transistors integrate these components into a single device, eliminating the need for these external components. In the UMC2NT1 series, both devices feature SOT-353 encapsulation, ideal for low power surface mount applications where board space is at a premium.

MOS full bridge, 55V/4.7A(-55V/-3.4A)

N-channel 650V 20.7A