Triode/MOS tube/transistor/module

These N-channel logic level MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring low in-line power loss and fast switching.

30 V, 3.5 A, 75 mΩ, Single P-Channel, Power MOSFET, SOT-23

N channel

General material, Vds=30V Id=46A Rds=5.8mΩ (8.0mΩ max) DFN3.3*3.3encapsulation;

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 40V Collector Current (Ic): 600mA Power (Pd): 150mW NPN, 40V, 600mA