Triode/MOS tube/transistor/module

N-channel, 100V, 32A, 0.011Ω@10V

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 46A Power (Pd): 28W On-Resistance (RDS(on)@Vgs,Id): 4.4mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate Charge (Qg@Vgs): 13.5nC@10V Input Capacitance (Ciss@Vds): 0.842nF@20V , Vds=40V Id=46A Rds=4.4mΩ, Working temperature: -55℃~+150℃@(Tj) DFN3*3encapsulation;

N-channel 600V 1A

NPN 115W 60V 10A Applications: Designed as a high quality amplifier that works up to 60 watts into a 4 ohm load.

NPN 115W 60V 10A Applications: Designed as a high quality amplifier that works up to 60 watts into a 4 ohm load.

Configuration N+P Type P-Ch VDS(V) -40 VGS(V) 20 ID(A)Max. -5.2 VGS(th)(v) -1.5 RDS(ON)(m?)@4.345V 81 Qg( nC)@4.5V 6.4 QgS(nC) 2.1 Qgd(nC) 2.5 Ciss(pF) 650 Coss(pF) 68 Crss(pF) 55

This high voltage NPN bipolar transistor is a spin-off of our popular SOT-23 3-lead device. The device is suitable for general switching applications and comes in a SOT-723 surface mount encapsulation. The device is suitable for low power surface mount applications where board space is at a premium.