Triode/MOS tube/transistor/module

N-channel, 400V, 2A, 3.6Ω@10V

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

PNP, Vceo=-50V, Ic=-3A, hfe=120~270

Configuration Dual Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 6.5 VGS(th)(v) 2 RDS(ON)(m?)@4.300V 46 Qg(nC)@4.5V - QgS(nC) 2.6 Qgd(nC) 2.2 Ciss(pF) 870 Coss(pF) 70 Crss(pF) 35

PNP, Vceo=-45V, Ic=-100mA