Triode/MOS tube/transistor/module

Field Effect Transistor (MOSFET) Type: P Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 60A Power (Pd): 60W On-resistance (RDS(on)@Vgs,Id: 5.5mΩ@ 10V, 15A Threshold Voltage (Vgs(th)@Id): 1.6@250uA Gate Charge (Qg@Vgs) 32nC@10V Input Capacitance (Ciss@Vds): 2.497nF@30V , Vds=30v Id=60A Rds=5.5 mΩ, working temperature: -55℃~+150℃@(Tj)

This PNP bipolar transistor is suitable for linear and switching applications. The device features TO-92 encapsulation and is suitable for medium power applications.

N-channel, 75V, 80A, 11mΩ@10V

Gear: 400-600

This dual PNP bipolar digital transistor consists of a transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The dual PNP bipolar digital transistor eliminates the need for separate components by integrating them into a single device. In the UMC2NT1 series, both devices feature SOT-353 encapsulation, ideal for low power surface mount applications where board space is at a premium.

The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are next-generation ignition IGBTs in a space-saving D-Pak (TO-252), industry standard D

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.