Triode/MOS tube/transistor/module

NPN RF

Configuration Dual Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 45 VGS(th)(v) 1.5 RDS(ON)(m?)@4.228V 20 Qg(nC)@4.5V 17.6 QgS(nC) 2.7 Qgd(nC) 6.3 Ciss(pF) 945 Coss(pF) 275 Crss(pF) 26

These dual N- and P-channel enhancement mode field effect transistors are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring in-line low power loss and fast switching.

NPN, Vceo=160V, Ic=600mA, hfe=150~240

N-Channel 100V 0.4A 1.5W

PNP

N+P channel, 30V, 8A, 18mΩ@10V; -30V, -8A, 32mΩ@-10V