Diode/Bridge Rectifier

150V, 1A

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

100V, 3A, VF=0.85V @ 3A. Temperature: -55~+150 C

Diode configuration: 1 pair of common cathode DC reverse withstand voltage (Vr): 60V Average rectified current (Io): 10A Forward voltage drop (Vf): 800mV@5A Reverse current (Ir): 100uA@60V

Diode configuration: 1 pair of common cathode DC reverse withstand voltage (Vr): 60V Average rectified current (Io): 10A Forward voltage drop (Vf): 800mV@5A Reverse current (Ir): 100uA@60V

100V, 10A, VF=0.8V@5A