Diode/Bridge Rectifier

150V, 15A, common cathode

VR=30V IO=0.5A [email protected]

VR=30V IO=0.5A [email protected]

I(AV) 40 VRRM(V) 100 IFsM(A) 320 VFM(V) 0.6 VFMI(AV)(A) 40 IRM@VRRM(μA) 14

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.