Diode/Bridge Rectifier

VR=100V IO=3A VF=0.85V@3A

VR=100V IO=3A VF=0.85V@3A

1000V, 6A

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. The Schottky diode is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

1 pair common cathode, 50V, 200mA