Diode/Bridge Rectifier

200V,5A,VF=0.95V@5A Silicon carbide Silicon carbide before the change model SS5200, same performance

The axis Schottky diode uses the Schottky diode potential barrier principle, and adopts a large-area metal-silicon power diode. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. It is ideal for low voltage high frequency inverters, freewheeling diodes and polarity protection diodes.

The axis Schottky diode uses the Schottky diode potential barrier principle, and adopts a large-area metal-silicon power diode. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. It is ideal for low voltage high frequency inverters, freewheeling diodes and polarity protection diodes.

60V,1A,VF=0.5V@1A