Diode/Bridge Rectifier

IF(A) 2 VR(V) 60 VF(V) 0.7 IR(uA) 500 IFSM(A) 50

IF(A) 2 VR(V) 60 VF(V) 0.7 IR(uA) 500 IFSM(A) 50

IF(AM)(A) 6 VRRM(V) 1000 IFSM(A) 175 VF(V) 1.1 IF(A) 3 IRM@VRRM(uA) 10

Silicon carbide (SiC) Schottky diode uses a new technology that can provide excellent switching performance and has higher reliability than silicon. Silicon carbide's no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make it a next-generation power semiconductor product. System benefits include highest energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

1000V, 1A, VF=1.1V@1A

double diode

80V, 100mA, trr=4ns, VF=1.2V@100mA, PD=150mW

Schottky, 2A 100V VF<0.85V Silicon carbideSOD-123FL

Schottky, 2A 100V VF<0.85V Silicon carbideSOD-123FL