STU9HN65M2

Product Overview

Use

It is used for high-voltage, high-speed power switching applications.

Characteristics

High voltage capability
Low on-resistance
Fast switching speed
Low gate charge

Package

The STU9HN65M2 is available in a TO-220 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic circuits.

Packaging/Quantity

The STU9HN65M2 is typically packaged in reels or tubes and is available in varying quantities based on customer requirements.

Specifications

Drain-Source Voltage (VDS): 650V
Continuous Drain Current (ID): 9A
On-Resistance (RDS(on)): 0.65Ω
Gate-Source Voltage (VGS): ±30V
Total Gate Charge (Qg): 20nC
Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STU9HN65M2 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

High voltage capability allows for use in various power applications.
Low on-resistance minimizes power losses and improves efficiency.
Fast switching speed enables rapid power control.

Advantages

Suitable for high-voltage applications
Low power dissipation
Enhanced efficiency in power management systems

Disadvantages

Sensitive to static electricity
Requires careful handling during installation

Working Principles

The STU9HN65M2 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The STU9HN65M2 is commonly used in: - Switching power supplies - Motor control systems - Inverters - LED lighting applications

Detailed and Complete Alternative Models

Some alternative models to the STU9HN65M2 include: - STP9NK65ZFP - IRF840 - FQP27P06

In conclusion, the STU9HN65M2 power MOSFET offers high-voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power switching applications. Its characteristics, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models make it a versatile component in the field of power electronics.

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What is STU9HN65M2?
- STU9HN65M2 is a high voltage N-channel Power MOSFET designed for various technical solutions requiring high power and efficiency.
What is the maximum voltage rating of STU9HN65M2?
- The maximum voltage rating of STU9HN65M2 is 650V, making it suitable for high voltage applications.
What is the maximum current rating of STU9HN65M2?
- The maximum continuous drain current rating of STU9HN65M2 is typically 9A, allowing it to handle substantial power loads.
What are the typical applications of STU9HN65M2?
- STU9HN65M2 is commonly used in power supplies, motor control, lighting systems, and other high voltage applications.
What is the on-state resistance (RDS(on)) of STU9HN65M2?
- The typical on-state resistance of STU9HN65M2 is low, enabling efficient power transfer and minimizing power loss.
Is STU9HN65M2 suitable for switching applications?
- Yes, STU9HN65M2 is well-suited for switching applications due to its fast switching characteristics and high voltage capability.
Does STU9HN65M2 require a heat sink for operation?
- Depending on the specific application and power dissipation, a heat sink may be necessary to ensure optimal thermal performance.
What are the recommended operating conditions for STU9HN65M2?
- STU9HN65M2 operates within specified temperature and voltage ranges, and proper gate drive voltage should be applied for reliable performance.
Can STU9HN65M2 be used in automotive applications?
- STU9HN65M2 is not specifically designed for automotive applications and may not meet automotive industry standards.
Where can I find detailed technical specifications and application notes for STU9HN65M2?
- Detailed technical specifications and application notes for STU9HN65M2 can be found in the product datasheet provided by the manufacturer or distributor.