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STP62NS04Z

STP62NS04Z

Product Overview

Category

The STP62NS04Z belongs to the category of power MOSFETs.

Use

It is used as a high-voltage N-channel enhancement-mode power MOSFET.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance

Package

The STP62NS04Z is available in a TO-220 package.

Essence

The essence of the STP62NS04Z lies in its ability to efficiently control high voltages in various electronic applications.

Packaging/Quantity

The STP62NS04Z is typically packaged in reels and is available in varying quantities based on customer requirements.

Specifications

  • Drain-Source Voltage (VDS): 55V
  • Continuous Drain Current (ID): 62A
  • On-Resistance (RDS(on)): 0.022 ohms
  • Power Dissipation (PD): 200W
  • Gate Threshold Voltage (VGS(th)): 2-4V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The STP62NS04Z features a standard TO-220 pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability for power applications
  • Fast switching speed for efficient operation
  • Low input capacitance for reduced switching losses
  • Low on-resistance for minimal power dissipation

Advantages

  • High voltage capability makes it suitable for power applications
  • Fast switching speed enhances efficiency
  • Low on-resistance reduces power dissipation

Disadvantages

  • May require additional circuitry for optimal performance in certain applications
  • Sensitivity to static electricity requires careful handling during installation

Working Principles

The STP62NS04Z operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to regulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The STP62NS04Z is commonly used in the following application fields: - Switching power supplies - Motor control - LED lighting - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the STP62NS04Z include: - IRF3205 - FQP50N06 - IRL540

In conclusion, the STP62NS04Z power MOSFET offers high voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of power applications across various industries.

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تکنیکی حل میں STP62NS04Z کے اطلاق سے متعلق 10 عام سوالات اور جوابات کی فہرست بنائیں

  1. What is the STP62NS04Z?

    • The STP62NS04Z is a power MOSFET designed for high-speed switching applications.
  2. What is the maximum drain-source voltage of the STP62NS04Z?

    • The maximum drain-source voltage of the STP62NS04Z is 40V.
  3. What is the continuous drain current rating of the STP62NS04Z?

    • The continuous drain current rating of the STP62NS04Z is 62A.
  4. What are the typical applications of the STP62NS04Z?

    • The STP62NS04Z is commonly used in applications such as motor control, power supplies, and DC-DC converters.
  5. What is the on-state resistance (RDS(on)) of the STP62NS04Z?

    • The on-state resistance of the STP62NS04Z is typically around 6.5 mΩ.
  6. Is the STP62NS04Z suitable for high-frequency switching applications?

    • Yes, the STP62NS04Z is designed for high-speed switching applications, making it suitable for high-frequency operation.
  7. Does the STP62NS04Z require a heat sink for thermal management?

    • Depending on the application and operating conditions, a heat sink may be required to manage the thermal performance of the STP62NS04Z.
  8. What is the gate-source voltage (VGS) required to fully enhance the STP62NS04Z?

    • The gate-source voltage required to fully enhance the STP62NS04Z is typically around 10V.
  9. Can the STP62NS04Z be used in automotive applications?

    • Yes, the STP62NS04Z is suitable for automotive applications due to its robust design and high-current capability.
  10. Are there any recommended driver ICs for driving the STP62NS04Z?

    • Commonly used driver ICs for driving the STP62NS04Z include those with high-current drive capability and suitable voltage levels for MOSFET gate driving.