STB24NM60N

Introduction

The STB24NM60N is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Semiconductor device
• Use: Power switching applications
• Characteristics: High voltage capability, low input capacitance, fast switching speed
• Package: TO-220FP
• Essence: Power MOSFET for efficient power management
• Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

• Voltage Rating: 600V
• Current Rating: 24A
• RDS(ON): 0.14Ω
• Gate Threshold Voltage (VGS(th)): 2-4V
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STB24NM60N follows the standard pin configuration for a TO-220FP package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• High voltage capability allows for use in various power applications
• Low input capacitance enables fast switching speed
• Efficient power management due to low RDS(ON) value

Advantages and Disadvantages

Advantages

• High voltage capability
• Fast switching speed
• Low input capacitance

Disadvantages

• Higher RDS(ON) compared to some alternative models
• Limited operating temperature range

Working Principles

The STB24NM60N operates based on the principles of field-effect transistors, utilizing the control of voltage at the gate terminal to regulate the flow of current between the source and drain terminals.

Detailed Application Field Plans

The STB24NM60N finds extensive use in the following applications: - Switching power supplies - Motor control - Lighting systems - Inverters

Detailed and Complete Alternative Models

Some alternative models to the STB24NM60N include: - STB26NM60N - STB20NM60N - STB30NM60N

In summary, the STB24NM60N is a versatile power MOSFET with high voltage capability and fast switching speed, making it suitable for a wide range of power management applications.

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