BR24T08F-WE2

Product Overview

Category: Integrated Circuit (IC)

Use: Data storage and retrieval

Characteristics: - Non-volatile memory - High-speed read and write operations - Low power consumption - Wide operating voltage range - Small form factor

Package: SOP-8 (Small Outline Package)

Essence: The BR24T08F-WE2 is a high-performance EEPROM (Electrically Erasable Programmable Read-Only Memory) IC that provides non-volatile data storage capabilities.

Packaging/Quantity: The BR24T08F-WE2 is typically sold in reels, with each reel containing 2500 units.

Specifications

• Memory Capacity: 8 kilobits (1 kilobyte)
• Interface: I2C (Inter-Integrated Circuit)
• Operating Voltage Range: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Write Cycle Endurance: 1 million cycles
• Data Retention: 100 years

Detailed Pin Configuration

The BR24T08F-WE2 features an SOP-8 package with the following pin configuration:

| Pin No. | Name | Function | |---------|------|----------| | 1 | VSS | Ground | | 2 | SDA | Serial Data Input/Output | | 3 | SCL | Serial Clock Input | | 4 | WP | Write Protect Input | | 5 | VCC | Power Supply | | 6 | NC | No Connection | | 7 | NC | No Connection | | 8 | VSS | Ground |

Functional Features

• Byte-level random access for efficient data retrieval
• Built-in write protection mechanism to prevent accidental data modification
• High-speed read and write operations for quick data access
• Low power consumption, making it suitable for battery-powered devices
• Wide operating voltage range allows compatibility with various systems

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data retention even during power loss - High endurance with 1 million write cycles - Compact form factor enables integration into space-constrained designs - I2C interface simplifies communication with microcontrollers

Disadvantages: - Limited storage capacity compared to other memory technologies - Relatively higher cost per kilobyte compared to larger memory chips

Working Principles

The BR24T08F-WE2 utilizes EEPROM technology to store and retrieve data. It employs a floating gate transistor structure that can trap or release electric charge, representing binary data (0s and 1s). The stored data remains intact even when the power supply is disconnected.

To write data, an electrical charge is applied to the floating gate, altering its state. Reading data involves detecting the charge level on the floating gate, which corresponds to the stored information.

Detailed Application Field Plans

The BR24T08F-WE2 is widely used in various applications, including but not limited to: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment, engine control units) - Industrial automation (e.g., programmable logic controllers, sensors) - Medical devices (e.g., patient monitoring systems, diagnostic equipment)

Its versatility, low power consumption, and compact size make it suitable for diverse industries requiring reliable non-volatile data storage.

Detailed and Complete Alternative Models

• BR24T08FJ-WE2: Similar specifications and features, but with an extended temperature range (-40°C to +105°C).
• BR24T16F-WE2: Double the memory capacity (16 kilobits) with the same package and interface.
• BR24T32F-WE2: Quadruple the memory capacity (32 kilobits) with the same package and interface.

These alternative models provide options for different storage requirements while maintaining compatibility with the BR24T08F-WE2's pin configuration and functional features.

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