Rohm Semiconductor
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2SB1308T100P
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2SB1308T100P

Product Overview

Category

The 2SB1308T100P belongs to the category of bipolar transistors.

Use

It is commonly used as a switching device in electronic circuits.

Characteristics

  • Low power loss
  • High current capability
  • High voltage capability

Package

The 2SB1308T100P is typically available in a TO-220 package.

Essence

This transistor is essential for controlling and amplifying electrical signals in various electronic applications.

Packaging/Quantity

The 2SB1308T100P is usually packaged individually and is available in varying quantities depending on the supplier.

Specifications

  • Collector-Base Voltage (VCBO): 60V
  • Collector Current (IC): 1A
  • Power Dissipation (PD): 1W
  • Transition Frequency (fT): 150MHz
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The 2SB1308T100P has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High current gain
  • Fast switching speed
  • Low saturation voltage

Advantages

  • Suitable for low-power applications
  • Compact size
  • Reliable performance

Disadvantages

  • Limited power dissipation capability
  • Sensitive to overvoltage conditions

Working Principles

The 2SB1308T100P operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the application of a small input signal.

Detailed Application Field Plans

This transistor is widely used in: - Audio amplifiers - Switching circuits - Voltage regulators

Detailed and Complete Alternative Models

Some alternative models to the 2SB1308T100P include: - 2N3904 - BC547 - 2SC945

In conclusion, the 2SB1308T100P is a versatile bipolar transistor with high current and voltage capabilities, making it suitable for various electronic applications.

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تکنیکی حل میں 2SB1308T100P کے اطلاق سے متعلق 10 عام سوالات اور جوابات کی فہرست بنائیں

  1. What is the maximum collector current of 2SB1308T100P?

    • The maximum collector current of 2SB1308T100P is 3A.

  2. What is the typical hFE (DC current gain) of 2SB1308T100P?

    • The typical hFE of 2SB1308T100P is 60-320.

  3. What is the maximum collector-emitter voltage (Vce) of 2SB1308T100P?

    • The maximum collector-emitter voltage of 2SB1308T100P is 50V.

  4. What are the typical applications for 2SB1308T100P?

    • 2SB1308T100P is commonly used in audio amplifiers, power management circuits, and general electronic switching applications.

  5. What is the thermal resistance of 2SB1308T100P?

    • The thermal resistance of 2SB1308T100P is typically around 125°C/W.

  6. Is 2SB1308T100P suitable for high-frequency applications?

    • No, 2SB1308T100P is not recommended for high-frequency applications due to its lower transition frequency.

  7. What is the package type of 2SB1308T100P?

    • 2SB1308T100P comes in a TO-220F package.

  8. Does 2SB1308T100P require a heat sink for certain applications?

    • Yes, for high-power applications or when operating at elevated temperatures, a heat sink may be necessary to ensure proper thermal management.

  9. Can 2SB1308T100P be used in automotive electronics?

    • Yes, 2SB1308T100P can be utilized in automotive electronic systems such as power control modules and lighting circuits.

  10. What are the key differences between 2SB1308T100P and similar transistors in its class?

    • Compared to similar transistors, 2SB1308T100P offers higher collector current and better thermal performance, making it suitable for more demanding applications.