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HUF75842P3

HUF75842P3

Product Overview

Category

The HUF75842P3 belongs to the category of power MOSFETs.

Use

It is used as a high-voltage, high-speed switching device in various electronic circuits and applications.

Characteristics

  • High voltage capability
  • Fast switching speed
  • Low on-resistance
  • Robust packaging for thermal dissipation

Package

The HUF75842P3 is typically available in a TO-220 package.

Essence

The essence of the HUF75842P3 lies in its ability to efficiently control high voltages and currents in electronic circuits.

Packaging/Quantity

The HUF75842P3 is usually packaged individually and is available in varying quantities based on customer requirements.

Specifications

  • Drain-Source Voltage (VDS): [specification]
  • Continuous Drain Current (ID): [specification]
  • On-Resistance (RDS(on)): [specification]
  • Gate-Source Voltage (VGS): [specification]
  • Operating Temperature Range: [specification]

Detailed Pin Configuration

The HUF75842P3 typically has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High voltage capability for power applications
  • Fast switching speed for efficient operation
  • Low on-resistance for reduced power loss

Advantages

  • Suitable for high-power applications
  • Efficient switching performance
  • Low power dissipation

Disadvantages

  • May require careful handling due to high voltage capabilities
  • Sensitive to static electricity

Working Principles

The HUF75842P3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The HUF75842P3 finds application in various fields including: - Power supply units - Motor control circuits - Inverters and converters - Audio amplifiers - LED lighting systems

Detailed and Complete Alternative Models

Some alternative models to the HUF75842P3 include: - IRF540N - FQP30N06L - STP55NF06L

In conclusion, the HUF75842P3 is a versatile power MOSFET with high voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of high-power electronic applications.

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