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MXLSMBG20CAE3

MXLSMBG20CAE3

Product Overview

  • Category: Electronic Component
  • Use: Signal Processing and Amplification
  • Characteristics: High Gain, Low Noise, Small Form Factor
  • Package: Surface Mount
  • Essence: Amplifying weak signals with minimal noise interference
  • Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

  • Gain: 20 dB
  • Frequency Range: 1 MHz - 2 GHz
  • Operating Voltage: 3.3V
  • Current Consumption: 10 mA
  • Noise Figure: 1.5 dB
  • Package Type: SOT-89

Detailed Pin Configuration

  • Pin 1: Input
  • Pin 2: Ground
  • Pin 3: Output

Functional Features

  • High gain amplification of input signals
  • Low noise figure for minimal signal distortion
  • Wide frequency range for versatile applications
  • Compact surface mount package for space-constrained designs

Advantages and Disadvantages

Advantages

  • High gain amplification
  • Low noise figure
  • Wide frequency range
  • Compact form factor

Disadvantages

  • Limited operating voltage range
  • Sensitive to ESD damage

Working Principles

The MXLSMBG20CAE3 operates by amplifying weak input signals while maintaining a low noise figure. It utilizes internal circuitry to achieve high gain and wide frequency response, making it suitable for various signal processing and amplification applications.

Detailed Application Field Plans

The MXLSMBG20CAE3 is ideal for use in RF communication systems, radar systems, test equipment, and other applications requiring signal amplification within the 1 MHz to 2 GHz frequency range. Its small form factor and low noise characteristics make it particularly well-suited for portable and space-constrained designs.

Detailed and Complete Alternative Models

  • MXLSMBG15CAE3: Lower gain version for more sensitive applications
  • MXLSMBG25CAE3: Higher gain version for applications requiring greater signal amplification
  • MXLSMBG20CAE4: Enhanced ESD protection for improved reliability

Note: The information provided is based on the latest available data at the time of writing.

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