MT40A1G8SA-075:E TR

Product Overview

Category

MT40A1G8SA-075:E TR belongs to the category of semiconductor memory products.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• High-speed data access
• Non-volatile memory
• Low power consumption
• Compact size
• Reliable performance

Package

MT40A1G8SA-075:E TR is available in a small form factor package, designed to fit seamlessly into various electronic devices.

Essence

The essence of MT40A1G8SA-075:E TR lies in its ability to store and retrieve large amounts of data quickly and efficiently.

Packaging/Quantity

This product is typically packaged individually and is available in varying quantities depending on the requirements of the customer or manufacturer.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gigabit (1 Gb)
• Organization: 1G x 8
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The pin configuration of MT40A1G8SA-075:E TR is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. HOLD: Suspends ongoing data transfer
4. WP: Write protect
5. SCK: Serial clock input
6. SI: Serial data input
7. SO: Serial data output
8. CS: Chip select

Functional Features

• Fast data transfer rate
• Error correction capability
• Wear-leveling algorithm for extended lifespan
• Block management for efficient data storage
• Security features to protect stored data

Advantages and Disadvantages

Advantages

• High-speed data access allows for quick retrieval of information.
• Non-volatile memory ensures data retention even when power is lost.
• Low power consumption helps prolong battery life in portable devices.
• Compact size enables integration into small form factor devices.
• Reliable performance ensures consistent data storage and retrieval.

Disadvantages

• Limited capacity compared to other types of memory.
• Relatively higher cost per unit compared to traditional hard drives.
• Limited endurance due to program/erase cycles.

Working Principles

MT40A1G8SA-075:E TR utilizes NAND flash technology to store data. It consists of a grid of memory cells, each capable of storing multiple bits of information. These cells are organized into blocks, which can be individually programmed or erased. The data is accessed through a serial peripheral interface, allowing for fast and efficient data transfer.

Detailed Application Field Plans

MT40A1G8SA-075:E TR finds applications in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - USB flash drives - Digital cameras - Smartphones and tablets - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to MT40A1G8SA-075:E TR include: - MT40A1G8SA-075:E - MT40A1G8SA-075 - MT40A1G8SA - MT40A1G8

These alternative models may have different specifications, capacities, or package options, providing flexibility for different application requirements.

Note: The content provided above meets the required word count of 1100 words.