MT29F512G08EMCBBJ5-6:B

Product Overview

Category

MT29F512G08EMCBBJ5-6:B belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F512G08EMCBBJ5-6:B offers a storage capacity of 512 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
• Low power consumption: The MT29F512G08EMCBBJ5-6:B is energy-efficient, consuming minimal power during operation.
• Compact package: This NAND flash memory comes in a compact package, making it suitable for integration into small-sized electronic devices.
• RoHS compliant: The product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness.

Packaging/Quantity

The MT29F512G08EMCBBJ5-6:B is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Memory type: NAND flash
• Capacity: 512 GB
• Interface: Universal Flash Storage (UFS)
• Voltage supply: 2.7V - 3.6V
• Operating temperature: -40°C to +85°C
• Package dimensions: 14mm x 18mm x 1.2mm

Detailed Pin Configuration

The MT29F512G08EMCBBJ5-6:B has a total of 48 pins. The pin configuration is as follows:

1. VCCQ
2. VCC
3. GND
4. RE#
5. WE#
6. CLE
7. ALE
8. CE#
9. R/B#
10. DQS
11. DQ0
12. DQ1
13. DQ2
14. DQ3
15. DQ4
16. DQ5
17. DQ6
18. DQ7
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page read and program operations: The MT29F512G08EMCBBJ5-6:B allows for efficient reading and programming of data at the page level.
• Block erase: This NAND flash memory supports block erase operations, enabling quick deletion of large data blocks.
• Wear leveling: The product incorporates wear-leveling algorithms to distribute write operations evenly across memory cells, enhancing overall lifespan and reliability.
• Error correction code (ECC): ECC functionality is integrated into the MT29F512G08EMCBBJ5-6:B, ensuring data integrity by detecting and correcting errors during read and write operations.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package
• RoHS compliant

Disadvantages

• Relatively high cost compared to lower-capacity NAND flash memory options
• Limited compatibility with older devices that do not support UFS interface

Working Principles

The MT29F512G08EMCBBJ5-6:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading or writing data, the appropriate voltage levels are applied to the memory cells, allowing for data retrieval or modification.

Detailed Application Field Plans

The MT29F512G08EMCBBJ5-6:B is widely used in various electronic devices and applications, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems - Embedded systems

Detailed and Complete Alternative Models

1. MT29F