MT29F512G08EKCBBJ5-6:B

Product Overview

Category

MT29F512G08EKCBBJ5-6:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F512G08EKCBBJ5-6:B offers a storage capacity of 512 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
• Low power consumption: The MT29F512G08EKCBBJ5-6:B is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact form factor, making it suitable for integration into small-sized electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness.

Package and Quantity

The MT29F512G08EKCBBJ5-6:B is available in a surface-mount package. Each package contains one unit of the NAND flash memory.

Specifications

• Storage Capacity: 512 GB
• Interface: Universal Flash Storage (UFS)
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 600 megabytes per second (MB/s)
• Package Type: Ball Grid Array (BGA)
• Package Dimensions: 14mm x 18mm x 1.2mm

Detailed Pin Configuration

The MT29F512G08EKCBBJ5-6:B has a total of 153 pins, which are assigned specific functions for proper operation. The pin configuration is as follows:

(Pin Number) - (Pin Name) 1 - VCC 2 - VCCQ 3 - GND 4 - RE# (Read Enable) 5 - WE# (Write Enable) 6 - CLE (Command Latch Enable) 7 - ALE (Address Latch Enable) 8 - CE# (Chip Enable) 9 - R/B# (Ready/Busy) 10 - DQ0-DQ7 (Data Input/Output) ... (remaining pins)

Functional Features

• Error Correction Code (ECC): The MT29F512G08EKCBBJ5-6:B incorporates ECC algorithms to detect and correct errors that may occur during data storage and retrieval.
• Wear Leveling: This feature ensures even distribution of write and erase cycles across the memory cells, prolonging the lifespan of the NAND flash memory.
• Bad Block Management: The product includes mechanisms to identify and manage defective blocks, preventing data loss and maintaining overall reliability.
• Data Protection: The MT29F512G08EKCBBJ5-6:B employs various techniques to safeguard stored data from unauthorized access or accidental deletion.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance ensures data integrity and durability.
• Low power consumption contributes to energy efficiency.
• Compact package facilitates integration into small-sized electronic devices.

Disadvantages

• Relatively higher cost compared to lower-capacity NAND flash memory options.
• Limited compatibility with older devices that do not support UFS interface.

Working Principles

The MT29F512G08EKCBBJ5-6:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells consist of floating-gate transistors that can retain charge even when power is removed. The presence or absence of charge in the cells represents binary data (0s and 1s). By applying appropriate voltage levels and utilizing various control signals, data can be written to or read from these memory cells.

Detailed Application Field Plans

The MT29F512G08EKCBBJ5-6:B finds application in a wide range of electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

• MT29F256G08AUCABH3-12IT: 256 GB NAND flash memory with UFS interface.
• MT29F1T08EMCABH3-12IT: 1 terabyte (TB) NAND flash memory with UFS interface.