MT29F512G08CFCBBWP-10:B

Product Overview

Category

MT29F512G08CFCBBWP-10:B belongs to the category of NAND flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F512G08CFCBBWP-10:B offers a storage capacity of 512 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over an extended period.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F512G08CFCBBWP-10:B comes in a compact package, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F512G08CFCBBWP-10:B is typically packaged in a small form factor, such as a surface-mount device (SMD) package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Model: MT29F512G08CFCBBWP-10:B
• Storage Capacity: 512 GB
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F512G08CFCBBWP-10:B follows a standard pin configuration for NAND flash memory. The specific pin layout can be found in the product datasheet provided by the manufacturer.

Functional Features

• High-speed data access: The MT29F512G08CFCBBWP-10:B offers fast read and write operations, allowing for efficient data access.
• Error correction: It incorporates error correction techniques to ensure data integrity and reliability.
• Wear leveling: This feature evenly distributes data writes across memory cells, extending the lifespan of the NAND flash memory.
• Bad block management: The MT29F512G08CFCBBWP-10:B includes mechanisms to handle and manage defective memory blocks effectively.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Relatively high cost compared to lower-capacity NAND flash memory options
• Limited endurance compared to other non-volatile memory technologies

Working Principles

The MT29F512G08CFCBBWP-10:B utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using electrical charges. When reading or writing data, the NAND flash memory employs voltage levels to represent binary values.

Detailed Application Field Plans

The MT29F512G08CFCBBWP-10:B is widely used in various electronic devices that require high-capacity data storage. Some common application fields include:

1. Smartphones and tablets: Enables large storage capacity for apps, media files, and user data.
2. Digital cameras: Provides ample space for storing high-resolution photos and videos.
3. Solid-state drives (SSDs): Serves as the primary storage medium for faster boot times and improved system performance.

Detailed and Complete Alternative Models

1. MT29F256G08CJABBWP-10:B: 256 GB NAND flash memory with similar characteristics and features.
2. MT29F1T08EMHAFJ4-IT:E: 1 terabyte (TB) NAND flash memory offering higher storage capacity.

Note: The list of alternative models is not exhaustive and may vary based on specific requirements and availability in the market.

This entry provides an overview of the MT29F512G08CFCBBWP-10:B NAND flash memory, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.