MT29F512G08CEHBBJ4-3R:B

Product Overview

Category

MT29F512G08CEHBBJ4-3R:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F512G08CEHBBJ4-3R:B offers a storage capacity of 512 gigabytes (GB), allowing users to store large amounts of data.
• Fast data transfer rate: With its advanced technology, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance with low power consumption, ensuring efficient operation and extended battery life.
• Durable design: The MT29F512G08CEHBBJ4-3R:B is built to withstand harsh environmental conditions, making it suitable for use in rugged devices.

Package and Quantity

The MT29F512G08CEHBBJ4-3R:B is available in a compact package that adheres to industry standards. It is typically sold in bulk quantities to meet the demands of manufacturers.

Essence

The essence of this product lies in its ability to provide high-capacity, reliable, and fast data storage for a wide range of electronic devices.

Specifications

• Manufacturer: Micron Technology Inc.
• Model: MT29F512G08CEHBBJ4-3R:B
• Memory Type: NAND Flash
• Storage Capacity: 512 GB
• Interface: Universal Flash Storage (UFS)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to 85°C
• Package Type: Ball Grid Array (BGA)
• Package Dimensions: 14mm x 18mm
• RoHS Compliance: Yes

Detailed Pin Configuration

The MT29F512G08CEHBBJ4-3R:B follows a standard pin configuration for NAND flash memory devices. The pinout is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE# - Chip Enable
4. RE# - Read Enable
5. WE# - Write Enable
6. CLE - Command Latch Enable
7. ALE - Address Latch Enable
8. WP# - Write Protect
9. R/B# - Ready/Busy
10. DQ0-DQ7 - Data Input/Output

Functional Features

• High-speed data transfer: The MT29F512G08CEHBBJ4-3R:B offers fast read and write speeds, allowing for quick access to stored data.
• Error correction: This NAND flash memory incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: The product utilizes wear-leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the device.
• Bad block management: It includes a bad block management system that identifies and isolates defective blocks, preventing data corruption.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Durable design

Disadvantages

• Relatively higher cost compared to lower-capacity storage options
• Limited compatibility with older devices lacking UFS support

Working Principles

The MT29F512G08CEHBBJ4-3R:B operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data. The data is stored by trapping electrons in a floating gate, which can be electrically programmed and erased.

When reading data, the controller sends appropriate commands to select the desired memory cell and retrieve the stored information. During write operations, the controller applies specific voltages to program the floating gates, altering the charge level and storing new data.

Detailed Application Field Plans

The MT29F512G08CEHBBJ4-3R:B finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. Samsung K9K8G08U0D
2. Toshiba THGBM5G6A2JBAIR
3. SK Hynix H27UCG8T2BTR
4. Intel NAND SSD 660p Series
5. Kingston A2000 NVMe PCIe M.2 SSD

These alternative models offer similar storage capacities and functionality to the MT29F512G08CEHBBJ4-