MT29F32G08CBACAWP:C TR

Product Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics: High capacity, reliable performance, compact size
• Package: Chip form
• Essence: Non-volatile memory for storing digital data
• Packaging/Quantity: Individual units or reels of multiple units

Specifications

• Memory Type: NAND Flash
• Capacity: 32 gigabytes (GB)
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles
• Package Dimensions: 48-ball VFBGA (Very Fine Pitch Ball Grid Array)

Pin Configuration

The MT29F32G08CBACAWP:C TR chip has the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. RE#
31. WE#
32. WP#
33. R/B#
34. CE#
35. CEB#
36. VSS
37. DQ0
38. DQ1
39. DQ2
40. DQ3
41. DQ4
42. DQ5
43. DQ6
44. DQ7
45. NC
46. NC
47. NC
48. VCC

Functional Features

• High-speed data transfer for efficient read and write operations
• Error correction mechanisms to ensure data integrity
• Wear-leveling algorithms to distribute data evenly across memory cells
• Block management techniques for efficient storage utilization
• Power-saving modes to reduce energy consumption during idle periods

Advantages

• Large storage capacity allows for extensive data storage
• Reliable performance ensures data integrity and longevity
• Compact size enables integration into various electronic devices
• High-speed data transfer enhances overall system performance

Disadvantages

• Limited endurance compared to other types of memory
• Relatively higher cost per gigabyte compared to traditional hard drives
• Susceptible to physical damage if mishandled or exposed to extreme conditions

Working Principles

The MT29F32G08CBACAWP:C TR is based on NAND flash memory technology. It utilizes a grid of memory cells, each capable of storing multiple bits of data. These cells are organized into blocks, which can be individually programmed or erased. The chip communicates with the host device through a parallel interface, allowing for fast data transfer.

When data needs to be written, the chip applies a high voltage to the appropriate memory cells, causing them to store the desired information. To erase data, the chip applies a high voltage to the entire block, resetting all the memory cells within it. This process of programming and erasing allows for flexible data storage and retrieval.

Detailed Application Field Plans

The MT29F32G08CBACAWP:C TR is widely used in various electronic devices and systems, including:

1. Solid-state drives (SSDs)
2. USB flash drives
3. Digital cameras
4. Mobile phones
5. Tablets
6. Industrial control systems
7. Automotive electronics
8. Embedded systems

Alternative Models

• MT29F32G08CBACAWP:C
• MT29F32G08CBACAWP:D
• MT29F32G08CBACAWP:E
• MT29F32G08CBACAWP:F

These alternative models offer similar specifications and functionality, providing flexibility for different application requirements.

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