MT29F32G08ABEDBJ4-12:D TR

Product Overview

Category: NAND Flash Memory
Use: Data storage in electronic devices
Characteristics: High capacity, fast read/write speeds, non-volatile memory
Package: BGA (Ball Grid Array)
Essence: Reliable and efficient data storage solution
Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Part Number: MT29F32G08ABEDBJ4-12:D TR
• Memory Capacity: 32 gigabits (4 gigabytes)
• Voltage Supply: 2.7V - 3.6V
• Interface: Toggle NAND
• Operating Temperature: -40°C to +85°C
• Read/Write Speeds: Up to 200 MB/s (sequential), up to 50,000 IOPS (random)

Detailed Pin Configuration

The MT29F32G08ABEDBJ4-12:D TR features a standard BGA package with the following pin configuration:

1. VCCQ: Power supply for I/O pins
2. GND: Ground
3. RE# / WE#: Read Enable and Write Enable control signals
4. CLE: Command Latch Enable
5. ALE: Address Latch Enable
6. CE#: Chip Enable control signal
7. R/B#: Ready/Busy status output
8. DQ0-DQ15: Data input/output pins
9. NC: No Connection (reserved)
10. WP#/ACC: Write Protect and Acceleration control signal
11. VCC: Power supply for internal circuitry
12. VSS: Ground
13. NC: No Connection (reserved)
14. NC: No Connection (reserved)
15. NC: No Connection (reserved)
16. NC: No Connection (reserved)

Functional Features

• High-speed data transfer with Toggle NAND interface
• Reliable and durable non-volatile memory
• Error correction and wear-leveling algorithms for enhanced reliability
• Power-saving features to optimize energy consumption
• Support for various data management functions, including bad block management and data scrambling

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Low power consumption - High reliability and durability - Support for advanced data management functions

Disadvantages: - Relatively higher cost compared to other storage solutions - Limited endurance (number of program/erase cycles)

Working Principles

The MT29F32G08ABEDBJ4-12:D TR is based on NAND flash memory technology. It stores data in a series of memory cells organized into blocks. Each cell can store multiple bits of information using multi-level cell (MLC) technology. When data is written, the memory cells are programmed by applying voltage to specific locations within the cells. Reading data involves sensing the voltage levels stored in the cells.

Detailed Application Field Plans

The MT29F32G08ABEDBJ4-12:D TR is widely used in various electronic devices that require high-capacity data storage, such as:

1. Solid-state drives (SSDs)
2. Smartphones and tablets
3. Digital cameras
4. Portable media players
5. Automotive infotainment systems
6. Industrial control systems
7. Medical devices

Detailed and Complete Alternative Models

1. MT29F32G08CBEDBJ4-12:D TR
2. MT29F32G08ABEDBH4-12:D TR
3. MT29F32G08CBEDBH4-12:D TR
4. MT29F32G08ABEDBL4-12:D TR
5. MT29F32G08CBEDBL4-12:D TR

These alternative models offer similar specifications and functionality, providing customers with options based on their specific requirements.

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