MT29F1G08ABAEAH4-AITX:E

Product Overview

• Category: NAND Flash Memory
• Use: Data storage in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Stores digital data using a series of memory cells
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 1 Gigabit (1 Gb)
• Interface: Parallel
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The MT29F1G08ABAEAH4-AITX:E follows a standard pin configuration for NAND flash memory ICs. The detailed pinout can be found in the product datasheet.

Functional Features

• High-Speed Read/Write: Enables fast data transfer between the memory and the device.
• Error Correction Code (ECC): Provides data integrity by detecting and correcting errors during read/write operations.
• Block Management: Allows efficient management of memory blocks, enabling wear leveling and improving overall lifespan.
• Bad Block Management: Identifies and excludes defective memory blocks from use, ensuring reliable data storage.
• Page Program Operation: Supports programming of individual memory pages, allowing flexible data storage and retrieval.

Advantages

• High storage capacity allows for large amounts of data to be stored.
• Non-volatile nature ensures data retention even when power is disconnected.
• Fast read/write speeds enable quick access to stored data.
• ECC provides data integrity, reducing the risk of data corruption.
• Block management and bad block management enhance overall reliability.

Disadvantages

• Limited endurance compared to other types of memory.
• Higher power consumption compared to some alternative memory technologies.
• Relatively higher cost per unit compared to lower capacity memory options.

Working Principles

The MT29F1G08ABAEAH4-AITX:E utilizes NAND flash memory technology. It consists of a series of memory cells organized into blocks, which are further divided into pages. Each memory cell can store multiple bits of data using a floating-gate transistor structure. Data is written by applying voltage to the appropriate memory cells, and read by sensing the electrical charge stored in the cells.

Application Field Plans

The MT29F1G08ABAEAH4-AITX:E is commonly used in various electronic devices that require non-volatile data storage, such as:

• Solid-State Drives (SSDs)
• USB Flash Drives
• Digital Cameras
• Mobile Phones
• Tablets

Alternative Models

• MT29F1G08ABADAWP-IT:D
• MT29F1G08ABADAWP-IT:E
• MT29F1G08ABADAWP-IT:F
• MT29F1G08ABADAWP-IT:G

These alternative models offer similar specifications and functionality, providing flexibility for different application requirements.

Note: The content provided above is an example and may not reflect actual product details.