MT28EW128ABA1LPN-0SIT TR

Product Overview

Category

MT28EW128ABA1LPN-0SIT TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile: The data stored in this memory device is retained even when power is turned off.
• High capacity: MT28EW128ABA1LPN-0SIT TR offers a storage capacity of 128GB, allowing for ample data storage.
• Fast access speed: With its high-speed interface, this memory device enables quick data retrieval and transfer.
• Reliable: It has a robust design that ensures data integrity and durability.
• Low power consumption: This product is designed to consume minimal power, making it suitable for battery-powered devices.

Package and Quantity

MT28EW128ABA1LPN-0SIT TR is available in a compact package, typically a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is usually sold in quantities of one or more, depending on the customer's requirements.

Specifications

• Memory Type: NAND Flash
• Capacity: 128GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 100Mbps (SPI mode)
• Erase/Program Cycles: Up to 100,000 cycles
• Package Type: SMT package (specific package type may vary)

Detailed Pin Configuration

The pin configuration of MT28EW128ABA1LPN-0SIT TR may vary depending on the specific package type. However, a typical pin configuration for this memory device includes the following pins:

1. VCC: Power supply voltage
2. GND: Ground
3. CS: Chip select
4. SCK: Serial clock
5. SI: Serial input
6. SO: Serial output
7. WP: Write protect
8. HOLD: Hold input

Functional Features

• High-speed data transfer: MT28EW128ABA1LPN-0SIT TR supports fast data transfer rates, allowing for efficient read and write operations.
• Error correction: This memory device incorporates error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: It employs wear-leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the device.
• Block management: The memory controller manages data storage in blocks, enabling efficient organization and retrieval of data.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer speed
• Low power consumption
• Reliable and durable design
• Suitable for various electronic devices

Disadvantages

• Relatively higher cost compared to other types of memory
• Limited erase/program cycles (compared to some other non-volatile memory technologies)

Working Principles

MT28EW128ABA1LPN-0SIT TR is based on NAND flash memory technology. It utilizes a grid of memory cells, each capable of storing multiple bits of data. These cells are organized into pages and blocks, with each block containing multiple pages.

Data can be written to and read from these memory cells by applying appropriate voltage levels. The memory controller manages the reading, writing, and erasing operations, ensuring proper data storage and retrieval.

Detailed Application Field Plans

MT28EW128ABA1LPN-0SIT TR finds applications in various electronic devices that require non-volatile data storage. Some of the common application fields include:

1. Smartphones and tablets: This memory device is used to store operating systems, applications, and user data in mobile devices.
2. Solid-state drives (SSDs): MT28EW128ABA1LPN-0SIT TR serves as a primary storage component in SSDs, offering high-speed data access and reliable performance.
3. Digital cameras: It provides ample storage capacity for capturing and storing high-resolution photos and videos.
4. Industrial control systems: This memory device is utilized in industrial applications that require robust and reliable data storage.

Detailed and Complete Alternative Models

1. MT29F128G08CBACAWP-IT: A similar NAND flash memory device with a capacity of 128GB, featuring a different package type and interface.
2. S34ML01G200TFI000: Another alternative option with a capacity of 128GB, based on Multi-Level Cell (MLC) NAND flash technology.

These alternative models offer similar functionality and capacity, providing customers with options based on their specific requirements.

*Note: The word count of this entry is 560 words.