AT49BV6416T-70TI

Product Overview

Category

AT49BV6416T-70TI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT49BV6416T-70TI retains stored data even when power is removed.
• High capacity: It has a storage capacity of 64 megabits (8 megabytes).
• Fast access time: The device offers a fast access time of 70 nanoseconds.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.

Package

The AT49BV6416T-70TI is available in a compact Thin Small Outline Package (TSOP) format.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for various electronic applications.

Packaging/Quantity

The AT49BV6416T-70TI is typically packaged in reels, with each reel containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Organization: 8M x 8 bits
• Voltage Range: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP

Detailed Pin Configuration

The AT49BV6416T-70TI features a parallel interface with the following pin configuration:

1. A0-A18: Address Inputs
2. DQ0-DQ7: Data Input/Output
3. CE: Chip Enable
4. OE: Output Enable
5. WE: Write Enable
6. VCC: Power Supply
7. GND: Ground

Functional Features

• Fast Read and Write Operations: The AT49BV6416T-70TI offers high-speed read and write operations, allowing for efficient data transfer.
• Sector Erase Capability: It supports sector erase operations, enabling selective erasure of specific memory sectors.
• Data Protection: The device includes built-in features to protect stored data from accidental modification or corruption.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Compact package size
• Sector erase capability for selective data erasure

Disadvantages

• Limited endurance: Flash memory has a limited number of erase/write cycles before degradation may occur.
• Relatively higher cost compared to other types of memory devices.

Working Principles

The AT49BV6416T-70TI utilizes flash memory technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, the memory cells are programmed by trapping charges in the floating gate. To read the data, the charges are detected by sensing the voltage levels in the memory cells.

Detailed Application Field Plans

The AT49BV6416T-70TI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49BV6416T-90TI: Similar to AT49BV6416T-70TI but with a faster access time of 90 ns.
2. AT49BV6416T-80TI: Similar to AT49BV6416T-70TI but with a faster access time of 80 ns.
3. AT49BV6416T-55TI: Similar to AT49BV6416T-70TI but with a faster access time of 55 ns.

These alternative models provide options with varying access times to suit different application requirements.

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