AT49BV001AN-55TI

Product Overview

Category

AT49BV001AN-55TI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: Can store up to 1 megabit (128 kilobytes) of data.
• Fast access time: Provides quick read and write operations.
• Low power consumption: Optimized for energy efficiency.
• Wide operating voltage range: Can operate within a range of 2.7V to 5.5V.

Package

AT49BV001AN-55TI is available in a standard 32-pin Thin Small Outline Package (TSOP).

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

AT49BV001AN-55TI is typically packaged in reels, with each reel containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Memory Size: 1 Megabit (128 Kilobytes)
• Operating Voltage Range: 2.7V - 5.5V
• Access Time: 55 nanoseconds
• Interface: Parallel
• Package Type: TSOP
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of AT49BV001AN-55TI is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. A8
14. A9
15. A11
16. A10
17. OE#
18. CE#
19. WE#
20. BYTE#
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. RY/BY#
30. NC
31. GND
32. A15

Functional Features

• Byte-wide and word-wide operations: Supports both byte and word-level read and write operations.
• Sector erase capability: Allows for selective erasure of specific memory sectors.
• Hardware and software protection: Provides mechanisms to protect data from unauthorized access or modification.
• Automatic sleep mode: Enters a low-power sleep mode when not in use, reducing power consumption.

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High storage capacity suitable for various applications.
• Fast access time enables quick data retrieval.
• Low power consumption prolongs battery life in portable devices.
• Wide operating voltage range allows compatibility with different systems.

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before degradation.
• Relatively higher cost compared to other types of memory.
• Susceptible to data corruption in case of power surges or electromagnetic interference.

Working Principles

AT49BV001AN-55TI utilizes flash memory technology to store data. It consists of floating-gate transistors that can trap and hold electrical charges, representing binary data. The stored charges determine the logic state of each memory cell, allowing for data retrieval and modification.

Detailed Application Field Plans

AT49BV001AN-55TI finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models to AT49BV001AN-55TI include: - AT49BV002AN-70TU - AT49BV004AN-90VI - AT49BV008AN-120CI - AT49BV016AN-150SI

These models offer similar functionality and characteristics, but with varying storage capacities and access times.

In conclusion, AT49BV001AN-55TI is a non-volatile memory device that provides reliable data storage in electronic systems. With its high capacity, fast access time, and low power consumption, it is suitable for a wide range of applications. However, it is important to consider the limited endurance and potential vulnerability to data corruption. Alternative models with different specifications are also available to meet specific requirements.