IPW60R120C7XKSA1

Product Overview

Use

It is used for high-voltage switching applications in various electronic circuits and systems.

Characteristics

High voltage capability
Low gate charge
Enhanced switching speed
Low on-resistance
Avalanche energy specified

Package

The IPW60R120C7XKSA1 is typically available in a TO-247 package.

Essence

This power MOSFET is designed to provide efficient and reliable high-voltage switching performance.

Packaging/Quantity

The standard packaging for the IPW60R120C7XKSA1 includes a quantity of 50 units per tube.

Specifications

Drain-Source Voltage (VDS): 600V
Continuous Drain Current (ID): 31A
On-Resistance (RDS(on)): 0.12Ω
Gate-Source Voltage (VGS): ±20V
Total Gate Charge (Qg): 70nC
Avalanche Energy (EAS): 320mJ

Detailed Pin Configuration

The IPW60R120C7XKSA1 features a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).

Functional Features

High voltage capability allows for use in various high-power applications.
Low gate charge enables fast and efficient switching.
Enhanced switching speed contributes to improved overall system performance.

Advantages

Suitable for high-voltage applications
Low on-resistance minimizes power loss
Fast switching speed enhances efficiency

Disadvantages

May require additional circuitry for driving the gate due to high gate-source voltage

Working Principles

The IPW60R120C7XKSA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.

Detailed Application Field Plans

The IPW60R120C7XKSA1 is commonly used in: - Switch-mode power supplies - Motor control systems - Inverters - Industrial automation equipment

Detailed and Complete Alternative Models

Some alternative models to the IPW60R120C7XKSA1 include: - IPW60R099C7 - IPW60R190C6 - IPW60R070C6

In conclusion, the IPW60R120C7XKSA1 power MOSFET offers high-voltage capability, low on-resistance, and enhanced switching speed, making it suitable for a wide range of high-power applications.

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What is the maximum voltage rating of IPW60R120C7XKSA1?
- The maximum voltage rating of IPW60R120C7XKSA1 is 1200V.
What is the maximum continuous drain current of IPW60R120C7XKSA1?
- The maximum continuous drain current of IPW60R120C7XKSA1 is 60A.
What is the typical on-state resistance of IPW60R120C7XKSA1?
- The typical on-state resistance of IPW60R120C7XKSA1 is 0.12 ohms.
What are the typical applications for IPW60R120C7XKSA1?
- IPW60R120C7XKSA1 is commonly used in applications such as motor control, power supplies, and inverters.
What is the operating temperature range of IPW60R120C7XKSA1?
- The operating temperature range of IPW60R120C7XKSA1 is typically -55°C to 150°C.
Does IPW60R120C7XKSA1 require a heatsink for operation?
- Depending on the application and power dissipation, a heatsink may be required for optimal performance of IPW60R120C7XKSA1.
Is IPW60R120C7XKSA1 suitable for high-frequency switching applications?
- Yes, IPW60R120C7XKSA1 is suitable for high-frequency switching due to its low on-state resistance and fast switching characteristics.
What is the gate-source threshold voltage of IPW60R120C7XKSA1?
- The gate-source threshold voltage of IPW60R120C7XKSA1 is typically around 4V.
Can IPW60R120C7XKSA1 be used in automotive applications?
- Yes, IPW60R120C7XKSA1 is suitable for automotive applications, provided it meets the specific requirements and standards for automotive use.
Are there any recommended driver ICs for driving IPW60R120C7XKSA1?
- Various MOSFET driver ICs from different manufacturers can be used to drive IPW60R120C7XKSA1, and the choice depends on the specific application requirements and design considerations.