IPD12CN10NGATMA1

Product Overview

Category

The IPD12CN10NGATMA1 belongs to the category of power MOSFETs.

Use

It is used as a power switch in various electronic circuits and applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge
• Avalanche energy specified
• Improved dv/dt capability

Package

The IPD12CN10NGATMA1 is available in a TO-252 package.

Essence

This MOSFET is essential for controlling power flow in electronic devices and systems.

Packaging/Quantity

It is typically packaged in reels and available in varying quantities based on customer requirements.

Specifications

• Drain-Source Voltage (VDS): 100V
• Continuous Drain Current (ID): 12A
• RDS(ON) Max @ VGS = 10V: 0.045Ω
• Gate-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 18nC
• Avalanche Energy: 50mJ
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD12CN10NGATMA1 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage capability allows for use in various power applications.
• Low on-resistance minimizes power loss and improves efficiency.
• Fast switching speed enables rapid control of power flow.
• Low gate charge reduces drive requirements and enhances performance.
• Improved dv/dt capability ensures reliable operation in high-speed switching applications.

Advantages and Disadvantages

Advantages

• High voltage capability suitable for diverse applications
• Low on-resistance for reduced power dissipation
• Fast switching speed for efficient power control
• Low gate charge for improved drive performance
• Enhanced dv/dt capability for reliable high-speed switching

Disadvantages

• May not be suitable for low-voltage applications
• Higher cost compared to standard MOSFETs with lower specifications

Working Principles

The IPD12CN10NGATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can effectively act as a switch, allowing or blocking the flow of power through the circuit.

Detailed Application Field Plans

The IPD12CN10NGATMA1 is commonly used in the following applications: - Power supplies - Motor control - Inverters - DC-DC converters - LED lighting - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the IPD12CN10NGATMA1 include: - IPD10N03LBG - IPD60R190P7 - IPD90R1K2C7

In conclusion, the IPD12CN10NGATMA1 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power control applications.

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