IPB70N12S311ATMA1
Product Overview
Category
The IPB70N12S311ATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic devices and systems.
Characteristics
- High voltage capability
- Low input capacitance
- Fast switching speed
- Low on-resistance
Package
The IPB70N12S311ATMA1 is typically available in a TO-263-3 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 120V
- Continuous Drain Current (ID): 70A
- RDS(ON) (Max) @ VGS = 10V: 9.5mΩ
- Input Capacitance (Ciss): 5200pF
- Power Dissipation (PD): 300W
Detailed Pin Configuration
The IPB70N12S311ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low input capacitance enables fast switching speeds.
- Low on-resistance minimizes power loss and heat generation.
Advantages
- Suitable for high-power applications
- Fast switching speed
- Low on-resistance for efficient power management
Disadvantages
- Higher input capacitance compared to some alternative models
- May require additional heat dissipation mechanisms for high-power applications
Working Principles
The IPB70N12S311ATMA1 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB70N12S311ATMA1 is commonly used in: - Switching power supplies - Motor control systems - Inverters and converters - Automotive electronics - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the IPB70N12S311ATMA1 include: - IPB60R099CP - IPB50R199CP - IPB40R199CP - IPB30R199CP
These alternatives offer similar performance characteristics and are suitable for comparable applications.
In conclusion, the IPB70N12S311ATMA1 is a high-performance power MOSFET with excellent voltage handling capabilities, making it suitable for a wide range of high-power switching applications. Its fast switching speed and low on-resistance make it an ideal choice for efficient power management in various electronic systems.
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What is the maximum drain-source voltage of IPB70N12S3-11ATMA1?
- The maximum drain-source voltage of IPB70N12S3-11ATMA1 is 120V.
What is the continuous drain current rating of IPB70N12S3-11ATMA1?
- The continuous drain current rating of IPB70N12S3-11ATMA1 is 70A.
What is the on-resistance of IPB70N12S3-11ATMA1 at a specific gate-source voltage?
- The on-resistance of IPB70N12S3-11ATMA1 varies with gate-source voltage. At Vgs = 10V, it is typically 6.5mΩ.
Can IPB70N12S3-11ATMA1 be used in automotive applications?
- Yes, IPB70N12S3-11ATMA1 is designed for use in automotive applications.
What is the operating temperature range of IPB70N12S3-11ATMA1?
- The operating temperature range of IPB70N12S3-11ATMA1 is -55°C to 175°C.
Does IPB70N12S3-11ATMA1 have built-in ESD protection?
- Yes, IPB70N12S3-11ATMA1 features built-in ESD protection.
What is the typical gate charge of IPB70N12S3-11ATMA1?
- The typical gate charge of IPB70N12S3-11ATMA1 is 40nC.
Is IPB70N12S3-11ATMA1 suitable for high-frequency switching applications?
- Yes, IPB70N12S3-11ATMA1 is suitable for high-frequency switching applications.
What package type does IPB70N12S3-11ATMA1 come in?
- IPB70N12S3-11ATMA1 is available in a TO-263-7 package.
Are there any application notes or reference designs available for using IPB70N12S3-11ATMA1 in motor control applications?
- Yes, Infineon provides application notes and reference designs for using IPB70N12S3-11ATMA1 in motor control applications.