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IPB180N10S402ATMA1
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IPB180N10S402ATMA1

Product Overview

Category

The IPB180N10S402ATMA1 belongs to the category of power MOSFETs.

Use

It is used for high-power applications such as motor control, power supplies, and inverters.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IPB180N10S402ATMA1 is available in a TO-263-3 package.

Essence

The essence of this product lies in its ability to efficiently handle high power levels with minimal losses.

Packaging/Quantity

It is typically packaged in reels and available in quantities suitable for production runs.

Specifications

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 180A
  • On-Resistance (RDS(on)): 4.2mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 160nC

Detailed Pin Configuration

The IPB180N10S402ATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • Low conduction losses
  • High efficiency
  • Enhanced thermal performance
  • Robustness and reliability in high-power environments

Advantages and Disadvantages

Advantages

  • High power handling capability
  • Efficient energy conversion
  • Reduced heat dissipation
  • Reliable performance under high loads

Disadvantages

  • Higher cost compared to lower power alternatives
  • Requires careful thermal management in high-power applications

Working Principles

The IPB180N10S402ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is well-suited for use in various applications including: - Electric vehicle powertrains - Industrial motor drives - Renewable energy systems - Uninterruptible power supplies (UPS) - High-power DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the IPB180N10S402ATMA1 include: - IPB120N04S4-03 - IPB110N15N3G - IPB100N06S4L-03

In conclusion, the IPB180N10S402ATMA1 is a high-performance power MOSFET designed for demanding high-power applications, offering efficient energy conversion and robust operation. Its specifications, functional features, and application versatility make it a valuable component in various industries.

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تکنیکی حل میں IPB180N10S402ATMA1 کے اطلاق سے متعلق 10 عام سوالات اور جوابات کی فہرست بنائیں

  1. What is the maximum drain-source voltage of IPB180N10S402ATMA1?

    • The maximum drain-source voltage of IPB180N10S402ATMA1 is 100V.

  2. What is the continuous drain current rating of IPB180N10S402ATMA1?

    • The continuous drain current rating of IPB180N10S402ATMA1 is 180A.

  3. What is the on-resistance of IPB180N10S402ATMA1?

    • The on-resistance of IPB180N10S402ATMA1 is typically 4.2mΩ at Vgs=10V.

  4. What is the gate threshold voltage of IPB180N10S402ATMA1?

    • The gate threshold voltage of IPB180N10S402ATMA1 is typically 2.5V.

  5. What is the typical input capacitance of IPB180N10S402ATMA1?

    • The typical input capacitance of IPB180N10S402ATMA1 is 8600pF.

  6. What is the operating temperature range of IPB180N10S402ATMA1?

    • The operating temperature range of IPB180N10S402ATMA1 is -55°C to 175°C.

  7. Is IPB180N10S402ATMA1 suitable for automotive applications?

    • Yes, IPB180N10S402ATMA1 is designed for automotive applications.

  8. Does IPB180N10S402ATMA1 have built-in protection features?

    • Yes, IPB180N10S402ATMA1 has built-in overcurrent and thermal protection.

  9. What is the package type of IPB180N10S402ATMA1?

    • IPB180N10S402ATMA1 comes in a TO-263-7 package.

  10. Can IPB180N10S402ATMA1 be used in high-power switching applications?

    • Yes, IPB180N10S402ATMA1 is suitable for high-power switching applications due to its high current and voltage ratings.