Infineon Technologies
تصویر کی نمائندگی ہو سکتی ہے۔
پروڈکٹ کی تفصیلات کے لیے وضاحتیں دیکھیں۔
IPB019N08N3GATMA1
تفصیل دیکھیں ڈیٹا شیٹ

IPB019N08N3GATMA1

Product Overview

Category

The IPB019N08N3GATMA1 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic devices and systems.

Characteristics

  • High power handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate charge

Package

The IPB019N08N3GATMA1 is available in a TO-263 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is typically packaged in reels with a quantity of 800 units per reel.

Specifications

  • Drain-Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 120A
  • RDS(ON) (Max) @ VGS = 10V: 1.9mΩ
  • Gate-Source Voltage (Vgs): ±20V
  • Total Gate Charge (Qg): 110nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB019N08N3GATMA1 has a standard pin configuration with three pins: Gate, Drain, and Source.

Functional Features

  • Low on-state resistance for minimal power loss
  • Fast switching speed for improved efficiency
  • High current handling capability for demanding applications
  • Wide operating temperature range for versatility

Advantages

  • High power handling capacity
  • Low on-state resistance reduces power dissipation
  • Fast switching speed enhances efficiency
  • Wide operating temperature range allows for diverse application environments

Disadvantages

  • Higher gate charge compared to some alternative models
  • May require additional heat sinking for certain high-power applications

Working Principles

The IPB019N08N3GATMA1 operates based on the principles of field-effect transistors, utilizing its low on-state resistance and fast switching speed to control the flow of power in electronic circuits.

Detailed Application Field Plans

The IPB019N08N3GATMA1 is well-suited for use in: - Motor control systems - Power supplies - Inverters - Battery management systems - Industrial automation equipment

Detailed and Complete Alternative Models

Some alternative models to the IPB019N08N3GATMA1 include: - IPB017N08N3G - IPB018N08N3G - IPB020N08N3G

In conclusion, the IPB019N08N3GATMA1 power MOSFET offers high power handling capabilities, fast switching speed, and low on-state resistance, making it an ideal choice for various high-power switching applications in electronic systems.

[Word Count: 386]

تکنیکی حل میں IPB019N08N3GATMA1 کے اطلاق سے متعلق 10 عام سوالات اور جوابات کی فہرست بنائیں

  1. What is the maximum drain-source voltage of IPB019N08N3GATMA1?

    • The maximum drain-source voltage of IPB019N08N3GATMA1 is 80V.

  2. What is the continuous drain current rating of IPB019N08N3GATMA1?

    • The continuous drain current rating of IPB019N08N3GATMA1 is 50A.

  3. What is the on-state resistance (RDS(on)) of IPB019N08N3GATMA1?

    • The on-state resistance (RDS(on)) of IPB019N08N3GATMA1 is typically 0.019 ohms.

  4. What is the gate threshold voltage of IPB019N08N3GATMA1?

    • The gate threshold voltage of IPB019N08N3GATMA1 is typically 2.5V.

  5. What is the power dissipation of IPB019N08N3GATMA1?

    • The power dissipation of IPB019N08N3GATMA1 is 150W.

  6. What are the typical applications for IPB019N08N3GATMA1?

    • IPB019N08N3GATMA1 is commonly used in motor control, battery protection, and power management applications.

  7. What is the operating temperature range of IPB019N08N3GATMA1?

    • The operating temperature range of IPB019N08N3GATMA1 is -55°C to 175°C.

  8. Does IPB019N08N3GATMA1 have built-in ESD protection?

    • Yes, IPB019N08N3GATMA1 has built-in ESD protection.

  9. Is IPB019N08N3GATMA1 RoHS compliant?

    • Yes, IPB019N08N3GATMA1 is RoHS compliant.

  10. What package type does IPB019N08N3GATMA1 come in?

    • IPB019N08N3GATMA1 comes in a TO-263-7 package.