IPB017N08N5ATMA1
Product Overview
Category
The IPB017N08N5ATMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-performance switch in various electronic circuits and power applications.
Characteristics
- High current-carrying capability
- Low on-state resistance
- Fast switching speed
- Low gate charge
- Excellent thermal performance
Package
The IPB017N08N5ATMA1 is typically available in a TO-263 package.
Essence
This MOSFET is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 80V
- Continuous Drain Current (ID): 100A
- On-State Resistance (RDS(on)): 1.7mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 60nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB017N08N5ATMA1 follows the standard pin configuration for a power MOSFET: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source
Functional Features
- High current-handling capacity
- Low conduction losses
- Fast switching characteristics
- Enhanced thermal performance
- Robustness against overcurrent and overvoltage conditions
Advantages and Disadvantages
Advantages
- Efficient power management
- Reduced heat dissipation
- Improved system reliability
- Enhanced circuit efficiency
Disadvantages
- Sensitivity to electrostatic discharge (ESD)
- Potential for shoot-through in certain applications
Working Principles
The IPB017N08N5ATMA1 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB017N08N5ATMA1 finds extensive use in the following application fields: - Switched-mode power supplies - Motor control systems - DC-DC converters - Battery management systems - Inverters and UPS units
Detailed and Complete Alternative Models
Some alternative models to the IPB017N08N5ATMA1 include: - IRF1405PBF - FDP8878 - AUIRFN014N
In conclusion, the IPB017N08N5ATMA1 power MOSFET offers high-performance characteristics and is widely utilized in diverse electronic applications for efficient power management and control.
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تکنیکی حل میں IPB017N08N5ATMA1 کے اطلاق سے متعلق 10 عام سوالات اور جوابات کی فہرست بنائیں
What is the maximum drain-source voltage of IPB017N08N5ATMA1?
- The maximum drain-source voltage of IPB017N08N5ATMA1 is 80V.
What is the continuous drain current rating of IPB017N08N5ATMA1?
- The continuous drain current rating of IPB017N08N5ATMA1 is 100A.
What is the on-state resistance (RDS(on)) of IPB017N08N5ATMA1?
- The on-state resistance (RDS(on)) of IPB017N08N5ATMA1 is typically 1.7mΩ at VGS = 10V.
What is the gate threshold voltage of IPB017N08N5ATMA1?
- The gate threshold voltage of IPB017N08N5ATMA1 is typically 2.5V.
Is IPB017N08N5ATMA1 suitable for automotive applications?
- Yes, IPB017N08N5ATMA1 is designed for automotive applications and meets AEC-Q101 standards.
What is the operating temperature range of IPB017N08N5ATMA1?
- The operating temperature range of IPB017N08N5ATMA1 is -55°C to 175°C.
Does IPB017N08N5ATMA1 have built-in ESD protection?
- Yes, IPB017N08N5ATMA1 features built-in ESD protection.
What package type does IPB017N08N5ATMA1 come in?
- IPB017N08N5ATMA1 is available in a TO-263-7 package.
Can IPB017N08N5ATMA1 be used in high-power applications?
- Yes, IPB017N08N5ATMA1 is suitable for high-power applications due to its low RDS(on) and high current rating.
Is there a recommended gate driver for IPB017N08N5ATMA1?
- Infineon provides recommendations for gate drivers suitable for use with IPB017N08N5ATMA1, including those with integrated protection features.