71V416S12PHG8

Product Overview

Category

The 71V416S12PHG8 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable performance

Package

The 71V416S12PHG8 is available in a compact package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The product is typically packaged individually and is available in various quantities depending on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 4 Megabits (512K x 8 bits)
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Organization: 512K words x 8 bits
• Package Type: Plastic TSOP-II

Detailed Pin Configuration

The 71V416S12PHG8 has a total of 44 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. /CE
15. /OE
16. WE
17. I/O0
18. I/O1
19. I/O2
20. I/O3
21. I/O4
22. I/O5
23. I/O6
24. I/O7
25. GND
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC

Functional Features

• High-speed access and data transfer
• Non-volatile storage
• Low power consumption
• Easy integration into electronic systems
• Reliable performance in various operating conditions

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Compact package size
• Suitable for a wide range of applications

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified capacity

Working Principles

The 71V416S12PHG8 operates based on the principles of static random access memory (SRAM). It stores digital information in a volatile manner, meaning that the stored data is lost when power is removed. The memory cells within the device are organized in a matrix, allowing for efficient read and write operations.

Detailed Application Field Plans

The 71V416S12PHG8 can be used in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Communication devices - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

1. 71V416L10PHG - Similar specifications with a lower access time of 10 ns.
2. 71V416Y10PHG - Similar specifications with a lower operating voltage of 2.5V.
3. 71V416Z15PHG - Similar specifications with a higher capacity of 8 Megabits.

These alternative models provide options with slight variations in performance and features, allowing customers to choose the most suitable option for their specific requirements.

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