Cypress Semiconductor Corp
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S34ML04G104BHV013
تفصیل دیکھیں ڈیٹا شیٹ

S34ML04G104BHV013

Product Overview

  • Category: NAND Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics: High capacity, fast read/write speeds, non-volatile memory
  • Package: BGA (Ball Grid Array)
  • Essence: Non-volatile memory solution for high-performance applications
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Capacity: 4GB
  • Interface: Toggle Mode 2.0
  • Voltage: 3.3V
  • Operating Temperature: -40°C to +85°C
  • Read Speed: Up to 200MB/s
  • Write Speed: Up to 100MB/s
  • Endurance: 10,000 Program/Erase cycles
  • Data Retention: Up to 10 years

Detailed Pin Configuration

The S34ML04G104BHV013 has a total of 48 pins arranged as follows:

  1. VCC
  2. VCCQ
  3. GND
  4. CE#
  5. RE#
  6. WE#
  7. CLE
  8. ALE
  9. WP#
  10. R/B#
  11. DQ0
  12. DQ1
  13. DQ2
  14. DQ3
  15. DQ4
  16. DQ5
  17. DQ6
  18. DQ7
  19. DQS0
  20. DQS1
  21. DQS2
  22. DQS3
  23. DM0
  24. DM1
  25. DM2
  26. DM3
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • Toggle Mode 2.0 interface for high-speed data transfer
  • Advanced Error Correction Code (ECC) for improved data integrity
  • Power-on and software reset functions
  • Block management for efficient data storage and retrieval
  • Wear-leveling algorithm to extend the lifespan of the memory

Advantages and Disadvantages

Advantages: - High capacity allows for storing large amounts of data - Fast read/write speeds enable quick data access - Non-volatile memory retains data even when power is disconnected - Reliable and durable design with high endurance and data retention - Compact BGA package for space-constrained applications

Disadvantages: - Higher cost compared to traditional hard drives or lower-capacity flash memory - Limited number of program/erase cycles before potential degradation - Sensitive to extreme temperatures and voltage fluctuations

Working Principles

The S34ML04G104BHV013 NAND Flash Memory utilizes a floating gate transistor structure to store data. When programming, electrons are trapped in the floating gate, representing a logical "1." Erasing the memory involves removing these trapped electrons, resetting the cell to a logical "0." The memory cells are organized into blocks, which can be individually programmed or erased.

Detailed Application Field Plans

The S34ML04G104BHV013 NAND Flash Memory is suitable for various applications, including but not limited to: - Solid-state drives (SSDs) - Smartphones and tablets - Digital cameras - Automotive infotainment systems - Industrial control systems - Embedded devices

Detailed and Complete Alternative Models

  1. S34ML02G104BHI000
  2. S34ML08G104BHV013
  3. S34ML16G104BHI000
  4. S34ML32G104BHI000

These alternative models offer different capacities and features to cater to specific application requirements.

Note: The content provided above is approximately 400 words. Additional information can be added to meet the required word count of 1100 words.

تکنیکی حل میں S34ML04G104BHV013 کے اطلاق سے متعلق 10 عام سوالات اور جوابات کی فہرست بنائیں

Sure! Here are 10 common questions and answers related to the application of S34ML04G104BHV013 in technical solutions:

  1. Q: What is S34ML04G104BHV013? A: S34ML04G104BHV013 is a specific model of NAND flash memory chip manufactured by a company called Cypress Semiconductor.

  2. Q: What is the storage capacity of S34ML04G104BHV013? A: S34ML04G104BHV013 has a storage capacity of 4 gigabytes (GB).

  3. Q: What is the voltage requirement for S34ML04G104BHV013? A: S34ML04G104BHV013 operates at a voltage range of 2.7V to 3.6V.

  4. Q: What is the interface used for connecting S34ML04G104BHV013 to a system? A: S34ML04G104BHV013 uses a standard NAND flash interface, such as ONFI (Open NAND Flash Interface) or Toggle Mode.

  5. Q: Can S34ML04G104BHV013 be used in industrial applications? A: Yes, S34ML04G104BHV013 is designed for industrial-grade applications and can withstand harsh operating conditions.

  6. Q: Is S34ML04G104BHV013 compatible with different operating systems? A: Yes, S34ML04G104BHV013 is compatible with various operating systems, including Windows, Linux, and embedded systems.

  7. Q: What is the maximum data transfer rate of S34ML04G104BHV013? A: The maximum data transfer rate of S34ML04G104BHV013 is typically around 200 megabytes per second (MB/s).

  8. Q: Can S34ML04G104BHV013 be used as a boot device? A: Yes, S34ML04G104BHV013 can be used as a boot device in systems that support booting from NAND flash memory.

  9. Q: Does S34ML04G104BHV013 support hardware encryption? A: No, S34ML04G104BHV013 does not have built-in hardware encryption capabilities.

  10. Q: What is the expected lifespan of S34ML04G104BHV013? A: S34ML04G104BHV013 has a typical endurance rating of 3,000 program/erase cycles, which determines its lifespan under normal usage conditions.

Please note that the answers provided here are general and may vary depending on specific implementation details and requirements.