S29PL064J60BAI120

Product Overview

Category

S29PL064J60BAI120 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

• Non-volatile: The stored data remains intact even when power is turned off.
• High capacity: S29PL064J60BAI120 has a storage capacity of 64 megabits (8 megabytes).
• Fast access time: It provides quick access to stored data, reducing latency.
• Reliable: The device is designed to withstand frequent read and write operations without data corruption.

Package

S29PL064J60BAI120 is available in a small form factor package, commonly known as Ball Grid Array (BGA). This package ensures efficient heat dissipation and compact integration into electronic devices.

Essence

The essence of S29PL064J60BAI120 lies in its ability to store and retrieve data reliably and quickly, making it an essential component in modern electronic devices.

Packaging/Quantity

The product is typically sold in reels or trays containing multiple units. The exact quantity may vary depending on the manufacturer's packaging specifications.

Specifications

• Memory Type: Flash
• Capacity: 64 Megabits (8 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Access Time: 60 nanoseconds
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address inputs
4. DQ0-DQ7: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte enable control
9. RY/BY#: Ready/busy status output
10. WP#/ACC: Write protect input

Functional Features

• High-speed data transfer: S29PL064J60BAI120 supports fast read and write operations, enabling efficient data transfer between the memory device and the host system.
• Sector erase capability: The flash memory can be erased in sectors, allowing for selective erasure of specific data blocks.
• Block lock protection: Certain memory blocks can be locked to prevent accidental modification or erasure.
• Power-saving mode: The device offers a low-power standby mode, reducing energy consumption when not in use.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable data retention
• Compact package size
• Sector erase capability

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
• Higher cost per unit compared to other types of memory.

Working Principles

S29PL064J60BAI120 utilizes the principles of floating-gate transistors to store data. It employs a grid of memory cells, where each cell represents a bit of information. Data is stored by trapping electric charge within the floating gate of the transistor, altering its conductive properties. This trapped charge determines whether the cell represents a "0" or a "1". The state of each memory cell can be read, written, or erased using specific voltage levels applied to the control pins.

Detailed Application Field Plans

S29PL064J60BAI120 finds applications in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - USB flash drives - Embedded systems - Networking equipment - Automotive electronics

Detailed and Complete Alternative Models

1. S29GL064N90TFI040: Similar flash memory device with a higher operating temperature range.
2. S25FL064L0XNFI001: Flash memory with a different interface (Serial Peripheral Interface) and smaller package size.
3. AT45DB641E-SHN2B-T: Serial flash memory with similar capacity and sector erase capability.

These alternative models offer similar functionality to S29PL064J60BAI120 but may vary in specific features, interface, or package size.

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