QMP29GL512P11TFI010

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: Integrated circuit (IC)
• Essence: Stores digital information in a compact and durable format
• Packaging/Quantity: Typically sold individually or in bulk quantities

Specifications

• Manufacturer: QM Technologies
• Model: QMP29GL512P11TFI010
• Memory Type: NAND Flash
• Capacity: 512 gigabytes (GB)
• Interface: Parallel
• Voltage: 3.3 volts (V)
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)

Detailed Pin Configuration

The QMP29GL512P11TFI010 has a pin configuration as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground reference | | 3 | A0-A18 | Address inputs | | 4 | DQ0-DQ15 | Data input/output lines | | 5 | WE# | Write enable control | | 6 | CE# | Chip enable control | | 7 | OE# | Output enable control | | 8 | RY/BY# | Ready/busy status output | | 9 | WP# | Write protect control | | 10 | RESET# | Reset control |

Functional Features

• High-speed data transfer for efficient read and write operations
• Reliable and durable storage solution with non-volatile memory
• Large storage capacity allows for extensive data storage
• Parallel interface enables fast communication with the device
• Wide operating temperature range for versatile usage scenarios

Advantages and Disadvantages

Advantages

• High-speed read and write operations enhance overall system performance
• Large storage capacity accommodates a vast amount of data
• Non-volatile memory ensures data retention even during power loss
• Compact IC package facilitates easy integration into electronic devices

Disadvantages

• Limited compatibility with certain devices due to the parallel interface
• Relatively higher power consumption compared to some alternative models
• Higher cost per gigabyte compared to lower-capacity flash memory options

Working Principles

The QMP29GL512P11TFI010 utilizes NAND flash memory technology to store digital information. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data, allowing for high-density storage. The parallel interface enables efficient data transfer between the memory and the host device.

When data is written, an electrical charge is applied to the appropriate memory cells, altering their state to represent the desired information. During read operations, the stored charges are detected and converted back into digital data. The non-volatile nature of NAND flash memory ensures that the stored information remains intact even when power is removed.

Detailed Application Field Plans

The QMP29GL512P11TFI010 is commonly used in various electronic devices that require large-scale data storage, such as: - Solid-state drives (SSDs) - Portable media players - Digital cameras - Industrial control systems - Automotive infotainment systems

Detailed and Complete Alternative Models

• QMP29GL256P11TFI010: 256GB capacity variant of the same series
• QMP29GL1T11TFI010: 1 terabyte (TB) capacity variant of the same series
• QMP29GL512P21TFI010: Higher-speed version with improved data transfer rate

These alternative models offer different storage capacities and performance characteristics to cater to diverse application requirements.

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