IS29GL256S-10TFV023

Product Overview

Category

IS29GL256S-10TFV023 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The IS29GL256S-10TFV023 offers a storage capacity of 256 gigabits (32 gigabytes).
• Fast data transfer rate: It operates at a speed of 10 nanoseconds, ensuring quick access to stored data.
• Reliable performance: This flash memory device is designed to provide reliable and consistent performance over an extended period.
• Low power consumption: The IS29GL256S-10TFV023 is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a small form factor, making it suitable for integration into compact electronic devices.
• Durable design: The product is built to withstand harsh environmental conditions and resist physical damage.

Package and Quantity

The IS29GL256S-10TFV023 is available in a surface-mount package. Each package contains one unit of the flash memory device.

Specifications

• Model: IS29GL256S-10TFV023
• Storage Capacity: 256 gigabits (32 gigabytes)
• Access Time: 10 nanoseconds
• Interface: Parallel
• Supply Voltage: 3.3 volts
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount
• Package Dimensions: 14mm x 20mm

Pin Configuration

The IS29GL256S-10TFV023 has a total of 48 pins. Here is the detailed pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. BYTE#
46. RY/BY#
47. VSS
48. NC

Functional Features

• High-speed data transfer: The IS29GL256S-10TFV023 offers fast read and write operations, enabling quick access to stored data.
• Error correction: It incorporates error correction techniques to ensure data integrity and reliability.
• Block erase capability: This flash memory device supports block erase operations, allowing for efficient management of stored data.
• Data protection: The product includes features like write protection and password protection to safeguard sensitive information.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Low power consumption
• Compact size
• Reliable performance

Disadvantages

• Limited endurance: Flash memory devices have a limited number of erase/write cycles before they may become unreliable.
• Higher cost compared to traditional hard drives.

Working Principles

The IS29GL256S-10TFV023 utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using different voltage levels. The device uses an interface to communicate with the host system, allowing for data read and write operations.

Detailed Application Field Plans

The IS29GL256S-10TFV023 is widely used in various electronic devices that require non-volatile storage. Some common application fields include:

1. Smartphones and tablets
2. Digital cameras
3. Portable media players
4. Solid-state drives (SSDs)
5. Industrial control systems
6. Automotive electronics

Alternative Models

Here are some alternative models that offer similar functionality:

1. IS29GL128S-10TFV023: 128 gigabit (16 gigabyte) flash memory device.
2. IS29GL512S-10TFV023: 512 gigabit (64 gigabyte) flash memory device.
3. IS29GL1G08A-10TFV023: