IS29GL128S-10DHV010

Product Overview

Category

IS29GL128S-10DHV010 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The IS29GL128S-10DHV010 offers a storage capacity of 128 gigabits (16 gigabytes), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a speed rating of 10 nanoseconds, this flash memory device ensures quick and efficient data read and write operations.
• Reliable performance: The IS29GL128S-10DHV010 is designed to provide reliable and consistent performance, ensuring data integrity and longevity.
• Low power consumption: This flash memory device is optimized for low power consumption, making it suitable for battery-powered devices.
• Compact package: The IS29GL128S-10DHV010 is available in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

The IS29GL128S-10DHV010 is typically packaged in a surface-mount technology (SMT) package. It is commonly available in reels or trays, with quantities varying based on customer requirements.

Specifications

• Manufacturer: Integrated Silicon Solution Inc. (ISSI)
• Model: IS29GL128S-10DHV010
• Memory Type: Flash memory
• Capacity: 128 gigabits (16 gigabytes)
• Speed Rating: 10 nanoseconds
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The IS29GL128S-10DHV010 features a parallel interface with a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. BYTE#
27. WE#
28. CE#
29. OE#
30. I/O0
31. I/O1
32. I/O2
33. I/O3
34. I/O4
35. I/O5
36. I/O6
37. I/O7
38. I/O8
39. I/O9
40. I/O10
41. I/O11
42. I/O12
43. I/O13
44. I/O14
45. I/O15
46. RY/BY#
47. RP#
48. GND

Functional Features

The IS29GL128S-10DHV010 offers the following functional features:

• Random access: Allows for direct access to any memory location, enabling efficient data retrieval.
• Block erase: Supports block-level erasure, allowing for quick and easy deletion of large chunks of data.
• Write protection: Provides write protection at the hardware level, preventing accidental modification or deletion of stored data.
• Error correction: Implements error correction techniques to ensure data integrity and reliability.
• High endurance: Designed to withstand a large number of program/erase cycles, ensuring long-term usability.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate ensures quick read and write operations.
• Reliable performance ensures data integrity and longevity.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package facilitates easy integration into electronic devices.

Disadvantages

• Parallel interface may limit compatibility with certain devices that only support serial interfaces.
• Higher cost compared to lower-capacity flash memory options.

Working Principles

The IS29GL128S-10DHV010 utilizes the principles of flash memory technology. It stores data in a non-volatile manner using floating-gate transistors. These transistors can retain their charge even when power is removed, allowing for persistent data storage. The device uses a parallel interface to communicate with the host system, enabling efficient data transfer.

Detailed Application Field Plans

The IS29GL128S-10DHV010 finds applications in various electronic devices that require high-capacity data storage. Some of the key application fields include:

1. Smartphones