CY62128BNLL-70SXE

Product Overview

Category

CY62128BNLL-70SXE belongs to the category of static random access memory (SRAM) chips.

Use

This product is primarily used as a high-speed, low-power memory solution in various electronic devices and systems.

Characteristics

• High speed: The CY62128BNLL-70SXE offers fast access times, making it suitable for applications that require quick data retrieval.
• Low power consumption: This SRAM chip is designed to operate efficiently with minimal power consumption, making it ideal for battery-powered devices.
• Non-volatile storage: The CY62128BNLL-70SXE retains stored data even when power is disconnected, ensuring data integrity.
• Wide temperature range: It can operate reliably across a wide temperature range, making it suitable for use in various environments.

Package and Quantity

The CY62128BNLL-70SXE is available in a compact 32-pin plastic small outline integrated circuit (SOIC) package. It is typically sold in quantities of one or more units.

Specifications

• Memory capacity: 128 kilobits (16 kilobytes)
• Access time: 70 nanoseconds
• Operating voltage: 2.7V - 3.6V
• Standby current: <1 microampere
• Operating temperature range: -40°C to +85°C

Pin Configuration

The CY62128BNLL-70SXE has a total of 32 pins, each serving a specific function. The detailed pin configuration is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A13)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (VCC)
7. Ground (GND)

Functional Features

• Random access: The CY62128BNLL-70SXE allows for random access to any memory location, enabling efficient data retrieval.
• Byte-wide operation: It supports byte-wide operations, allowing for easy interfacing with microcontrollers and other devices.
• Low standby power: In standby mode, the chip consumes minimal power, prolonging battery life in portable applications.

Advantages

• High-speed performance enables quick data access.
• Low power consumption makes it suitable for battery-powered devices.
• Non-volatile storage ensures data integrity even during power loss.
• Wide temperature range allows for reliable operation in various environments.

Disadvantages

• Limited memory capacity compared to other types of memory chips.
• Relatively higher cost per kilobit compared to larger capacity memory chips.

Working Principles

The CY62128BNLL-70SXE utilizes static random access memory technology. It stores data in a flip-flop circuit, which retains information as long as power is supplied. The chip uses address inputs to select specific memory locations and read/write operations to access or modify data.

Application Field Plans

The CY62128BNLL-70SXE can be used in various electronic systems and devices, including but not limited to: - Embedded systems - Industrial automation - Medical equipment - Communication devices - Automotive electronics

Alternative Models

Other alternative models that offer similar functionality to the CY62128BNLL-70SXE include: - CY62128BLL-70SXI - CY62128ELL-45SXIT - CY62128EV30LL-45ZSXI

Please note that the above list is not exhaustive, and there may be additional alternative models available in the market.

In conclusion, the CY62128BNLL-70SXE is a high-speed, low-power SRAM chip with non-volatile storage capabilities. It offers reliable performance, wide temperature range, and is suitable for various applications in the electronics industry.